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rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 131206 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . rf micro devices ? and rfmd ? are trademarks of rfmd, llc. bluetooth is a trademark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks, and registered trademarks are the property of their respective owners. ?20 13, rf micro devices, inc. 1 of 12 pr eliminary RFHA3960 28v/48v 3watts/6.3watts gan rf power amplifier the rf ha3960 is a 28v , 3w and 48v , 6.3w high power d iscrete amplifier designed for commercial wireless infrastructure, cellular and wimax infrastructure, industrial/scientific/medical and general purpose broadband amplifier application. using an advanced high power density gallium nitride (gan) semiconducto r process, these high - performance amp lifiers achieve high efficiency, linearity and flat gain over a broad frequency range in a single amplifier design. the RFHA3960 is an unmatched gan transistor packaged in a plastic over - molded soic , 8 pin package. the package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. functional block diagram ordering information rf ha3960 s2 sample bag with 2 pieces RFHA3960sb bag with 5 pieces RFHA3960sq bag with 25 pieces RFHA3960sr short reel with 100 pieces RFHA3960tr7 7 reel with 500 pieces RFHA3960tr13 13 reel with 2500 pieces RFHA3960pcba - 410 fully assembled evaluation board 2400 to 2600mhz, 28v and 48v operation package: plastic over molded , 8 - pin, soic8 features broadband operation dc to 6ghz advanced gan hemt technology advanced heat - sink technology 28v operation typical p3db performance at 2 .5 ghz ? output power 3w at 2.5ghz ? drain efficiency 57 % ? small signal gain = 16db 48v operation typical p3db performance at 2 .5 ghz ? output power 6.3w at 2.5ghz ? drain efficiency 50% ? small signal gain = 15.5db - 40 c to 85 c operating temperature applications commercial wireless infrastructure cellular and wimax . infrastructure civilian and military radar general purpose broadband amplifier public mobile radio industrial, scientific and medical rf in vgs pin 2,3 rf out vds pin 6,7 gnd base rf ha3960
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 131206 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of p atents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 12 rf ha3960 preliminary absolute maximum rat ings parameter rating unit drain voltage (v d ) 150 v gate voltage (v g ) - 8 to +2 v operational voltage 50 v ruggedness (vswr) 10:1 storage temperature range - 55 to +125 c operating temperature range (t c ) - 40 to +85 c operating junction temperature (t j ) 2 00 c human body model class 1a mttf (t j < 200c, 95% confidence limits) * 1.8e + 07 hours mttf (t j < 250c, 95% confidence limits) * 1.4 e + 05 thermal resistance, r th (junction to case) measured at t c = 85c, dc bias only tbd c/w caution! esd sensitive device. rfmd green: rohs status based on eu directive 2011/65/eu (at time of this document revision) , halogen free per iec 61249 - 2 - 21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical performance or functional operation of the device under absolute maximum rating conditions is not implied. nominal operating parameters parameter specification unit condition min typ max recommended operating conditions drain voltage (v dsq ) 28 v gate voltage (v gsq ) - 4.5 - 1.11 v drain bias current 50 ma frequency of operation 2500 mhz recommended operating conditions drain voltage (v dsq ) 48 v gate voltage (v gsq ) - 4.5 - 1.12 v drain bias current 50 ma frequency of operation 2500 mhz capacitance c rss tbd pf v g = - 4 v, v d = 0v c iss tbd pf c oss tbd pf dc functional test i g (off) - gate leakage 0.05 ma v g = - 4 v, v d = 0v i d (off) - drain leakage 0.01 ma v g = - 4 v, v d = 18 v v gs (th) - threshold voltage 0.95 v v d = 48v, i d = 2.2 ma i g (stress ) C gate leakage at high drain voltage 0.1 ma v g = - 4 v, v d = 150v
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 131206 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of p atents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 12 rf ha3960 preliminary parameter specification unit condition min typ max rf functional test test conditions: v dsq = 2 8v, i dq = 50 ma, t = 25c, performance in a standard tuned test fixture v gs (q) - 1.1 v v dsq = 28v, i dq = 50ma linear gain 1 6 db cw, p in = 0 dbm, f = 2500 mhz power gain 13 db cw, p in = 22dbm, f = 2500mhz drain efficiency tbd % pae tbd % input return loss - 12 db acp tbd dbc rf typical performance test conditions: cw operation, v dsq = 2 8v, i dq = 50 ma, t = 25c, performance in a standard tuned test fixture small signal gain 16 db cw, f = 2500 mhz output power at p3db 35 dbm cw, f = 2500 mhz drain efficiency at p3db 57 % cw, f = 2500 mhz pae 54 % cw, f = 2500 mhz input return loss - 17 db cw, f = 2500 mhz imd3 - 40 dbc 2 - tone, f c = 2500 mhz ,1mhz tone spacing , v dsq = 2 8v, i dq = 50 ma rf typical performance test conditions: cw operation, v dsq = 4 8v, i dq = 50 ma, t = 25c, performance in a standard tuned test fixture small signal gain 15.5 db cw, f = 2500 mhz output power at p3db 38 dbm cw, f = 2500 mhz drain efficiency at p3db 50 % cw, f = 2500 mhz pae 47 % cw, f = 2500 mhz input return loss - 23 db cw, f = 2500 mhz imd3 - 45 dbc 2 - tone, f c = 2500 mhz ,1mhz tone spacing , v dsq = 4 8v, i dq = 80 ma
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 131206 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of p atents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 4 of 12 rf ha3960 preliminary typical performance in standard 2.5ghz fixed tuned test fixture , ( cw, t = 25c, unless noted)
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 131206 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of p atents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 5 of 12 rf ha3960 preliminary typical performance in standard 2.5ghz fixed tuned test fixture , (cw, t = 25c, unless noted)
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 131206 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of p atents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 6 of 12 rf ha3960 preliminary typical performance in standard 2.5ghz fixed tuned test fixture , (2 - tone , t = 25c, unless noted)
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 131206 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of p atents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 7 of 12 rf ha3960 preliminary typical performance in standard 2.5ghz fixed tuned test fixture , (2 - tone , t = 25c, unless noted)
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 131206 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of p atents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 8 of 12 rf ha3960 preliminary evaluation board schematic 2500mhz application circuit evaluation b oard bill of materials (bo m ) 2500mhz application circuit description reference designator manufacturer manufacturer's p/n cap, 12pf, 10%, 50v, x7r, c1 ,c2,c7,c8 atc 800a120jt cap, 4.7uf , 10%, 50v, x7r, c3,c4 murata electronics grm 55 er72a475 ka01 l cap, 0.1u f, 10%, 50v, x7r, c5,c6 murata electronics grm155r71h102ka01d cap, 3.3p f, 10%, 50v, x7r, c9,c10 atc 800a3r3bt cap, 1.0p f, 10%, 50v, x7r, c11 atc 800a1r0bt cap, 1.5p f, 10%, 50v, x7r, c12 atc 800a1r5bt res,10 ohm r1 panasonic 1206 res,0 ohm r2 panasonic . 0603 1
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 131206 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of p atents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 9 of 12 rf ha3960 preliminary evaluation board assembly drawing
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 131206 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of p atents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 10 of 12 rf ha3960 preliminary package outline and branding drawing (dimensions in millimeters) pin names and descriptions pin name description 1 n/c no internal connection. 2 gate/rfin gate vg - rf input 3 gate/rfin gate vg - rf input 4 n/c no internal connection. 5 n/c no internal connection. 6 drain/rfout drain vd - rf output 7 drain/rfout drain vd - rf output 8 n/c no internal connection. 9 source source - ground base 1 5 2 6 3 7 4 8 9
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 131206 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of p atents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 11 of 12 rf ha3960 preliminary bias instruction for RFHA3960 evaluation board ? esd sensitive material. please use proper esd precautions when handling devices of evaluation board. ? evaluation board requires additional external fan cooling. ? connect all supplies before powering up the evaluation board. 1. connect rf cables at rfin and rfout. 2. connect ground to the ground supply terminal, and ensure that both the vg and vd grounds are also connected to this g round terminal. 3. apply - 8v to vg ate . 4. apply 28/48 v to vd rain . 5. increase v g until drain current reaches desi red 50 ma bias point. 6. turn on rf inp ut.
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 131206 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of p atents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 12 of 12 rf ha3960 preliminary device handling/environmental conditions rfmd does not recommend operating this device with typical drain voltage applied and the gate pinched off in a high humidity, high temperature environment. gan hemt devices are esd sensitive materials. please use proper esd precautions when handling devices or evaluation boards. gan hemt capacitances the physical structure of the gan hemt results in three terminal capacitors similar to other fet technologies. t hese capacitances exist across all three terminals of the device. the physical manufactured characteristics of the device determin e the value of the c ds (drain to source), c gs (gate to source) and c gd (gate to drain). these capacitances change value as the terminal voltages are varied. rfmd presents the three terminal capacitances measured with the gate pinched off (v gs = - 8v) and zero volts applied to the drain. during the measurement process, the parasitic capacitances of the package that holds the amplif ier is removed through a calibration step. any internal matching is included in the terminal capacitance measurements. the capacitan ce values presented in the typical characteristics table of the device represent the measured input (c iss ), output (c oss ), a nd reverse (c rss ) capacitance at the stated bias voltages. the relationship to three terminal capacitances is as follows: c iss = c gd + c gs c oss = c gd + c ds c rss = c gd dc bias the gan hemt device is a depletion mode high electron mobility transistor (hemt). at zero volts v gs the drain of the device is saturated and uncontrolled drain current will destroy the transistor. the gate voltage must be taken to a potential lower tha n the source voltage to pinch off the device prior to applying the drain voltage, taking care not to ex ceed the gate voltage maximum limits. rfmd recommends applying v gs = - 5v before applying any v ds . rf power transistor performance capabilities are determined by the applied quiescent drain current. this drain current can be adjusted to trade off power, li nearity, and efficiency characteristics of the device. the recommended quiescent drain current (i dq ) shown in the rf typical performance table is chosen to best represent the operational characteristics for this device, consid ering manufacturing variations and expected performance. the user may choose alternate conditions for biasing this device based on performance trade - offs. mounting and thermal considerations the thermal resistance provided as r th (junction to case) represents only the packaged device thermal characteristics. this is measured using ir microscopy capturing the device under test temperature at the hottest spot of the die. at the same time, th e package temperature is measured using a thermocouple touching the backside of the die embedded i n the device heat - sink but sized to prevent the measurement system from impacting the results. knowing the dissipated power at the time of the measurement, the thermal resistance is calculated. in order to achieve the advertised mttf, proper heat removal must be considered to maintain the junction at or below the maximum of 200 c. proper thermal design includes consideration of ambient temperature and the thermal resistance from ambient to the back of the package including heat - sinking systems and air flow mechanisms. incorporating the dissipated dc power, it is possible to calculate the junction temperature of the device.

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